new chip material could triple device speed and slash energy use
beijing, Monday, 21 July 2025.
researchers at peking university have engineered a new chip material, a 2D indium selenide wafer, that could revolutionize electronics. this innovation addresses the limitations of silicon at nanoscale dimensions. early testing shows that the new transistors could operate three times faster than current 3nm silicon tech, while drastically reducing energy consumption. this material meets the performance targets set for 2037, potentially transforming the landscape of chip manufacturing and design.
silicon’s limitations and the search for alternatives
As silicon approaches its physical limits at the nanoscale, researchers globally seek alternative materials to enhance chip performance [1]. Peking University researchers have developed a two-dimensional indium selenide (InSe) wafer [1]. This new material addresses the constraints of silicon as chip sizes shrink [1]. Industry giants like TSMC, Intel, and Samsung are investing in two-dimensional technology research, recognizing its potential to revolutionize the semiconductor industry [2]. This pursuit of advanced materials highlights the urgency to overcome the limitations of traditional silicon-based chips [2].
performance and energy efficiency gains
The newly developed InSe transistors exhibit exceptional performance characteristics [3]. They boast an average electron mobility of 287 cm²/V·s, alongside near-Boltzmann limit switching performance and a 78% ballistic ratio [2]. These metrics surpass existing two-dimensional semiconductor devices [2]. Tests on 10 nm channel InSe transistors reveal a threefold reduction in intrinsic delay and a significant decrease in energy-delay product compared to current 3 nm silicon technology [1][2]. These performance improvements could lead to substantial gains in computing power and energy efficiency [1].
manufacturing and scalability
A key challenge has been producing large, high-quality InSe wafers suitable for mass production [1]. Peking University’s team developed a ‘solid-liquid-solid’ strategy to overcome this [1][3]. This method enables controlled preparation of large-area, high-quality InSe wafers, transitioning from laboratory prototypes to scalable manufacturing [1]. This breakthrough is significant because it addresses the manufacturing bottlenecks that have historically limited the use of InSe in commercial applications [1][3]. The team successfully created 5 cm diameter wafers with smooth surfaces and highly ordered atomic arrangements [1].
investment implications and market potential
This innovation has significant implications for investors [GPT]. The enhanced performance and energy efficiency of InSe-based chips could revolutionize various sectors [1]. These sectors include artificial intelligence, cloud computing, 6G communications, and more [2][3]. The potential for lower energy consumption, possibly reducing chip energy use to a third of current levels, is particularly appealing for data centers and AI applications [2]. Companies that invest early in InSe technology and manufacturing could gain a competitive edge, potentially leading to higher stock valuations [GPT].
comparison with carbon-based chips
While InSe shows promise, carbon-based chip technology is also advancing [4]. China has launched its first carbon-based chip production line, aiming to bypass the need for EUV lithography [4]. Peking University teams have been leaders in carbon nanotube technology, achieving significant milestones [4]. However, challenges remain in scaling up carbon-based chip production and achieving cost-effectiveness for civilian applications [4]. Both InSe and carbon-based technologies represent potential paths to break free from the limitations of silicon and the reliance on advanced lithography systems [4].