Silicon Be Gone? Peking University's Bismuth Transistor Sparks Chip Race

2025-03-13 general

Beijing, Thursday, 13 March 2025.
Peking University researchers have reportedly created the first silicon-free 2D transistor. This could shake up the semiconductor industry. The new transistor uses bismuth oxyselenide. It may offer faster speeds and lower power consumption than silicon. Initial tests show it outperforming chips from Intel, TSMC, and Samsung under the same conditions. China is cut off from key chipmaking tools. This development could be a way to bypass those restrictions. This research could represent a major shift in chip technology.

GAAFET Explained

The Peking University team’s transistor uses a gate-all-around field-effect transistor (GAAFET) architecture [4][7]. GAAFETs represent an advance over MOSFET and FinFET technologies [7]. In a GAAFET, the gate surrounds the channel, offering greater control over the current [7]. This design is crucial for manufacturing microchips at the 3nm node and below [1]. The university’s innovation lies in the transistor’s two-dimensional nature and the use of bismuth instead of silicon [7]. Professor Peng Hailin stated that their transistor is the ‘fastest, most efficient transistor ever’ [1].

Performance and Efficiency

The silicon-free transistor reportedly outperforms the latest 3nm chips from TSMC by 40% [4][5]. It also boasts a 10% reduction in energy consumption [4][5]. This leap in performance stems from the unique properties of bismuth oxyselenide (Bi₂O₂Se) [1][7]. The material allows for a thinner channel, approximately 1.2 nanometers thick [4]. This ultra-thin channel, combined with a smooth interface between Bi₂O₂Se and Bi₂SeO₅, facilitates higher electron mobility and lower operating voltage [4]. The transistor requires only 0.5 volts, significantly less than silicon-based chips [4].

Strategic Implications for China

This development arrives as the U.S. contemplates further restrictions on China’s access to GAAFET technology [1]. Professor Peng described their development of 2D material-based transistors as ‘changing lanes’ [1]. China is investing heavily in research to overcome restrictions on tools like EUV lithography [1]. This innovation could allow China to bypass existing technology bottlenecks [4]. The ability to mass produce this silicon-free transistor could provide a significant competitive advantage [5]. Overcoming challenges in large-scale manufacturing and compatibility with existing processes are key [4].

Investor Outlook

The news could trigger a shift in investor sentiment. Companies heavily reliant on silicon-based technologies may face increased scrutiny [4]. Semiconductor companies that can adapt to new materials like bismuth oxyselenide could see a surge in interest [7]. While mass production is still a challenge, the potential for a 40% performance increase and 10% energy reduction compared to TSMC’s 3nm process could lead to significant long-term gains [4][5]. Investors should monitor developments in material science and chip manufacturing for opportunities [GPT].

Bronnen

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